High quality BaF2 (111) thin film was epitaxially grown on a CaF2 (111) substrate by chemical vapor deposition. An novel fluorinated Barium β-diketone chelate; Ba(ofhd)2 was used as the source material. Oxygen was introduced to complete the fluorination of the barium precursor. The full width at half maximum (Δθ50) of the X-ray rocking curve of the film was 3-10 min. RBS spectra showed that the χmin value of the BaF2 film was 3.7% and that of BaF2 single crystal was 2.8%. SIMS analysis confirmed that carbon and oxygen incorporation was at background levels.
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Sato et al. (1993) studied this question.
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