Transverse-mode stabilised AlGaInP (γL = 638 nm) compressively strained multiquantum-well laser diodes have been successfully fabricated by MOCVD using (100) GaAs substrates with a misorientation of 7° towards the (011) direction. The maximum CW operation temperature was 60°C, which is the highest value for 630 nm-band AlGalnP lasers so far. These lasers operated for more than 2000 h without significant degradation under 3 mW at 40°C.
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Honda et al. (1992) studied this question.
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