Activation of the Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition (MOCVD) has been successfully improved using post-heat treatment. The p-type carrier concentration and electrical activity in the (Al0.65Ga0.35)0.5In 0.5P layers were 1.8 × 1016cm-3 and 0.7, respectively. Activation of the Zn acceptors was found to be attributable to the hydrogen in the AIGaInP layer.
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Hamada et al. (1992) studied this question.