Performance of p+-n HgCdTe photodiodes

The performance of p + -n HgCdTe photodiodes is analysed in comparison with n + -p ones. The authors consider the 40-77 K temperature region and 7-15 mu m cut-off wavelengths. The effects of doping profiles on the photodiode parameters (R 0 A product, quantum efficiency) are elucidated by forward-condition steady-state analysis. The influence of different junction current compositions on the R 0 A product is considered. It is clearly shown that the R 0 A product for p + -n junctions is higher, especially for long-wavelength photodiodes. Results of calculations are compared with experimental data reported by other authors.