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Second-generation infrared image sensors are becoming available in a variety of infrared detector materials, including photovoltaic HgCdTe, PtSi, and lnSb and photoconductive extrinsic silicon, PbS, and PbSe. We review the background of the evolution of infrared detector materials and summarize the formats and configurations available now in prototype production. Capsule data summaries are provided to assist the reader in understanding the operating range of spectral response, temperature, and other performance parameters such as uniformity for each detector material type.
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P.R. Norton (1991) studied this question.