ODMR investigation of the PGaantisite defect in GaP

ODMR investigations of as-grown and electron-irradiated GaP confirm that the P Ga antisite defect behaves, in its singly ionised state P Ga 4+ , as an electron trap in direct competition with band edge recombination processes. A broad photoluminescence band peaking at 1.1 eV shows triplet (S=1) ODMR which is associated with the two-electron P Ga 3+ state of the antisite. The triplet excited state has (111) symmetry and is formed by spin-dependent electron transfer from shallow donors to the P Ga 4+ antisite.