By constant capacitance-voltage transient measurements we are able to determine the dopant and deep imperfection density versus distance profiles, regardless of either the absolute density of imperfection levels, or their density relative to the dopant density. The data analysis of the method is similar to the well-known capacitance versus voltage measurement, which is very convenient compared to other imperfection profiling methods.
No takes yet. Share an insight, caveat, or question.
Shiau et al. (1987) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: