General considerations for interpreting junction capacitance in complex systems

Many attempts have been made to provide theoretical and experimental methods to achieve a simple interpretation of the measurement of the capacitance of a junction as a function of reverse bias voltage. In this paper we present a quite general but simple formulation that includes all of these previous cases and is useful for describing experimental results in complex systems both conceptually and quantitatively. The results are useful especially for materials containing a high density of deep imperfection levels.