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A study of the conductance and capacitance associated with traps in Schottky barriers is described. A sample calculation of these two quantities is developed and compared with experimental data obtained in GaP VPE saples. It is shown that traps introduce peaks on the conductance-vs-temperatures curves; from them the concentration of each trap can be calculated. A study at different frequencies permits the determination of the characteristics of the traps. In GaP we have observed trapping effects in donor levels at Ec−Et?100 and 86 meV, the emission rates were found, respectively, to equal 2×1011 and 2×109 s−1 for these two levels. It is also shown that photoconductance effects occur at the oxygen deep levels.
Vincent et al. (Mon,) studied this question.
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