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Photocapacitance effects are studied in Schottky barriers made of GaAs high purity epitaxial layers. Evidence is given for two levels at 0.39 and 0.75 eV above the valence band. These levels seem to be associated with the same centre which is probably related to some native defects because they appear in all samples. Both adding and removing electrons to each level have been investigated, and it is demonstrated that a strong lattice relaxation effect occurs at least for the upper level (i.e. at 0.75 eV).
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Bois et al. (1974) studied this question.
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