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Demonstrate a deep-level admittance spectroscopy technique to characterize deep impurity states in ZnTe Schottky-barrier diodes.

July 15, 1972Applied Physics Letters

Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriers

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Authors

DLD. L. LoseeCarestream (United States)

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Implication

Spectroscopic analysis demonstrates characterization of deep impurity levels in zinc telluride Schottky barriers, highlighting a method to determine defect depths and densities.

Key Points

Demonstrate a deep-level admittance spectroscopy technique to characterize deep impurity states in ZnTe Schottky-barrier diodes.
Measured electrical conductance across varying temperatures and frequencies in ZnTe Schottky-barrier diodes.
Developed a small-signal theoretical framework for numerical comparison against experimental capacitance data.
Extracted impurity level depths and capture coefficients from conductance peaks measured as a function of temperature and frequency.
Determined deep-level defect types and densities through numerical comparison of small-signal theory with capacitance measurements.

Cite This Study

D. L. Losee (1972) studied this question.

synapsesocial.com/papers/6a1f17bc4d2ebb160c7295c3 https://doi.org/10.1063/1.1654276

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Implication

Spectroscopic analysis demonstrates characterization of deep impurity levels in zinc telluride Schottky barriers, highlighting a method to determine defect depths and densities.

Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriers

Discussion

Member takes

Implication

Key Points

Cite This Study

Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriers

Discussion

Member takes

Implication

Key Points

Cite This Study

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