Penn's model of an isotropic semiconductor is used to calculate ε1(q), the real part of the static dielectric function. With the aid of the optical f‐sum rule the expression for the interband transition matrix element is obtained which is different from that of Penn. The calculations reveal close correspondence of ε1(q) with that of other authors obtained from the realistic model of the band structure. The dielectic functions of Si, Ge, Gap, GaAs, and ZnSe crystals are given.
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Rashenov et al. (1972) studied this question.
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