Low dielectric constant (low k ) fluorocarbon films have been deposited by pulsed plasma chemical vapor deposition with a variety of different precursors. Deposition rates and resulting films composition have been characterized as a function of pulse timing, deposition temperature, and substrate precursors. To examine the thermal decomposition process, we have constructed a novel apparatus for observation of decomposition, utilizing laser interferometry to examine changes in films thickness/properties during the heating process. Using the technique in conjunction with X‐ray photoelection spectroscopy, we have identified at least two methods of decomposition. Loss of short chain side groups is seen to occur at temperatures as low as ∼100°C. At higher temperatures, bulk film decomposition is observed, and the rate is limited by mass‐transport of the decomposition products. Additionally, plasma‐deposited films are observed to incorporate oxygen on atmospheric exposure. Oxygen groups formed in the films are believed to contribute to the decomposition process.
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Cruden et al. (1999) studied this question.