We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm² V^-1 s^-1. We could observe spin transport over lengths up to 20 μm at room temperature, the largest distance measured so far for graphene. Due to enhanced charge-carrier diffusion, spin relaxation lengths are measured up to 4.5 μm. The relaxation times are similar to values for lower quality SiO₂-based devices, around 200 ps. We find that the relaxation rate is determined in almost equal measures by the Elliott-Yafet and D'Yakonov-Perel mechanisms.
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Zomer et al. (2012) studied this question.
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