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Angle-resolved photoemission measurements with synchrotron radiation (about 20--50 eV) have been carried out on a black-phosphorus single crystal to study the interlayer interaction which characterizes the essential properties of the narrow-gap semiconductor, black P. The band dispersions along the {Γ}Z (interlayer) direction have been successfully obtained and compared with the self-consistent pseudopotential calculation. It is found that the overall features obtained are in good agreement with the calculation although an overestimation of the interlayer dispersion and the valence-band width by about 0.5 and 1 eV, respectively, was observed in the calculation.
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Takahashi et al. (1986) studied this question.
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