Observations on intensity oscillations in reflection high-energy electron diffraction during epitaxial growth of Si(001) and Ge(001)

Intensity oscillations have been found in the specular beam of reflection high-energy electron diffraction patterns during growth of Si(001) and Ge(001) by molecular beam epitaxy. The reported results demonstrate the dependence of the amplitude and damping of the oscillations on different parameters such as substrate temperature, electron beam angle of incidence, and azimuth.