Double-Scattering Mechanism to Account for the Si K -X-Ray Yields Observed during Argon-Ion Bombardment of Silicon

Si K x rays are observed when solid Si is bombarded by 160-260-keV Ar⁺⁺ ions. The production of such x rays is interpreted in terms of the Fano-Lichten model, and a double-scattering mechanism whereby Si K vacancies are produced by electron promotion to an Ar L2,3 vacancy formed in a prior collision.