Energy Levels in Quantum Wells of Nonparabolic Semiconductors

Energy eigenvalues are given for quantum wells of the GaAs/GaAlAs, GaInAs/AlInAs, and InAs/GaAlSb systems, for widths ranging between 0.5 and 20 nm. The energy band nonparabolicity is shown to affect the values significantly particularly for wells with widths of about 2 nm. The InAs/GaAlSb wells are shown to have lowest energy levels with odd parity because of the negative effective mass in the barrier layer for energies below the mid‐gap energy. Experiments are suggested for the detection of these levels.