Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1−xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x

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We report on the growth and electrical characterization of modulation-doped Al0.24Ga0.76As/AlxGa1−xAs/Al0.24Ga0.76As quantum wells with mole fractions as low as x = 0.00057. Such structures will permit detailed studies of the impact of alloy disorder in the fractional quantum Hall regime. At zero magnetic field, we extract an alloy scattering rate of 24 ns−1 per%Al. Additionally, we find that for x as low as 0.00057 in the quantum well, alloy scattering becomes the dominant mobility-limiting scattering mechanism in ultra-high purity two-dimensional electron gases typically used to study the fragile ν = 5/2 and ν = 12/5 fractional quantum Hall states.