Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 1, 2004IEEE Journal of Selected Topics in Quantum ElectronicsOpen Access

Multilayer (Al,Ga)N Structures for Solar-Blind Detection

View Full Paper
Ask AI
Bookmark
Share

Authors

MMMauro MoscaUniversity of PalermoJRJ.-L. ReverchonIII V LabNGN. GrandjeanApplied Photonics (United Kingdom)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Mosca et al. (2004) studied this question.

synapsesocial.com/papers/6a96d68d96bab72bf50e4403https://doi.org/10.1109/jstqe.2004.833879
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures1991 · 93 citations
  2. 2Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy2002 · 32 citations
  3. 3Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics1996 · 90 citations
  4. 4Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications1999 · 93 citations
  5. 5Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours1997 · 330 citations