The flexible nonvolatile memory thin-film transistor (F-MTFT) is demonstrated. The gate stack is composed of ferroelectric poly(vinylidene fluoride-trifluoroethylene) gate insulator and ZnO semiconducting channel. All the processes are performed below 150 °C on a poly(ethylene naphthalate) substrate. The ferroelectric field-effect-driven memory window and the on/off ratio of the fabricated F-MTFT were 7.8 V and 10 8 , respectively. These behaviors did not show so marked degradations at bending situations with a curvature radius of 0.97 cm and after repetitive bendings of 20,000 cycles. The programmed on/off ratio was initially 6.6 × 10 5 and retained to be approximately 130 after a lapse of 15,000 s.
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Yoon et al. (2011) studied this question.
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