Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention

We have fabricated the TaN-[SiO2-LaAlO3]-HfON-[LaAlO3-SiO2]-Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated reten tion window at 125°C, and a 5.5-V endurance window at 106cycles were measured under very fast 100-μs and low ±16-V program/erase. These excellent results were achieved using an As+implant into the HfON trapping layer, which were sig nificantly better than those of the control device without ion implantation.