CVD of Titanium Oxide Thin Films from the Reaction of Tetrakis(dimethylamido)‐ titanium with Oxygen

TiO2 thin films on silicon wafers have been prepared from the reaction of Ti(NMe2)4 with O2 at 250–300 °C by CVD processes. These films, which are carbon free and contain no TiN or TiOxNy species, are amorphous before annealing but crystalline anatase after annealing at 600 °C in air. The average dielectric constant (κ) of the annealed films is 50(5), with an average leakage current of 5(3)×10–5 A cm–2, and breakdown strength of 1.8(0.3) MV cm–1.