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January 1, 2000Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Effectiveness of Ti, TiN, Ta, TaN, and W2N as barriers for the integration of low-k dielectric hydrogen silsesquioxane

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Authors

YZYuxiao ZengArmy Medical UniversitySRStephen W. RussellUniversity of Alabama at BirminghamAMAndrew J. McKerrow

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Zeng et al. (2000) studied this question.

synapsesocial.com/papers/6a96e6cd7c15eaca025790a2https://doi.org/10.1116/1.591176
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