Electron irradiation of AlGaN∕GaN and AlN∕GaN heterojunctions

The effects of 10MeV electron irradiation on AlGaN∕GaN and AlN∕GaN heterojunctions grown by molecular beam epitaxy are reported. The irradiation increases the resistivity of the GaN buffer due to compensation by radiation defects with levels near Ec−1eV and decreases the mobility of the two-dimensional electron gas (2DEG) near the AlGaN∕GaN (or AlN∕GaN) interface. The bulk carrier removal rate in the GaN buffer is the same for both types of structures and similar to carrier removal rates for undoped n-GaN films. In structures with a density of residual donors of ∼1015cm−3, irradiation with electron doses of ∼5×1015cm−2 renders the buffer semi-insulating. The 50% degradation of the 2DEG conductivity happens at several times higher doses (close to 3×1016cm−2 versus 6.5×1015cm−2) for AlN∕GaN than for AlGaN∕GaN structures, most likely because of the lower thickness of the AlN barrier.