Reflection high-energy electron diffraction studies of InSe and GaSe layered compounds grown by molecular beam epitaxy

We have investigated the molecular beam homoepitaxial and heteroepitaxial growth of InSe and GaSe III–VI compounds semiconductors. In situ reflection high-electron energy diffraction measurements reveal that two-dimensional epitaxial growth occurs on (00.1) oriented substrates, at substrate temperatures ranging from 300 to 350 °C. A scanning electron microscopy study of the films surfaces has been performed to correlate their morphology to the growth conditions.