The effect of fast neutron and gamma radiation on the electrical characteristics of low noise microwave GaAs MESFET amplifiers has been evaluated. The change in the noise figure and gain at S- and X-band was determined at neutron fluences between 3×1012 to 1×1015 n/cm2 and gamma dose of 2×107 rads (Si). The radiation induced changes are described and the causes for them are discussed.
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Borrego et al. (1979) studied this question.
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