Deposition of diamond films at low pressures and their characterization by positron annihilation, Raman, scanning electron microscopy, and x-ray photoelectron spectroscopy

We have deposited diamond films with micron-size crystals on Si〈111〉 using low-pressure hot-filament-assisted chemical vapor deposition. These films have been characterized by positron annihilation, Raman spectroscopy, scanning electron microscopy, and x-ray photoelectron spectroscopy. In addition to the results for the electronic structure and morphology, we also present new results for the lattice defects present in these films.