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A layered material SnSe2 was grown epitaxially on various layered materials (MoS2, NbSe2, graphite), while reacting with Al2O3(0001) substrates. The films were characterized by means of X-ray photoemission spectroscopy, reflection high energy electron diffraction, and scanning tunneling microscopy. The observed band bending was consistent to the work function difference between the film and the substrate, indicating the Schottky limit property of the junctions. Applications of this system are discussed.
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Shimada et al. (1993) studied this question.
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