Tin (Sn) thin films are deposited on BiSe substrate via vapor deposition under ultrahigh vacuum conditions, and the surface electronic structure and interface chemistry are systematically investigated using X‐ray and ultraviolet photoemission spectroscopy (XPS and UPS) measurements. Spectroscopy analysis reveals the formation of SnSe bonds along with a reduction of Bi, leading to the emergence of multiple Sn‐based interfacial phases such as SnSe and SnSe. Thus, our study estabilishes predominance of interfacial chemistry over epitaxial stanene growth on BiSe at room temperature, highlighting the challenges associated with the interface engineering in layered topological systems.
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Sharma et al. (2025) studied this question.
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