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This paper proposes a wideband dual-polarized patch filtenna with high gain, good suppression level, as well as high isolation. By loading four stepped-type parasitic patches with short pins above the radiation patch antenna and attaching two η shaped slots in microstrip lines, three resonance points in band and two radiation nulls out of band is created. The fabricated antenna achieves high port isolation of exceeding 32 dB between two differential ports over a wide bandwidth of 16.4% (2.29-2.7 GHz). High gain of 9.8 dB is realized and out of band suppression level is better than 19.3 dB. The excellent performance makes our antenna has a great deal of potential for LTE 2300/LTE 2500.
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Ye et al. (2025) studied this question.
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