Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma

A high efficiency nitrogen rf plasma source has been used to grow GaNAs by diluting the N2 gas with Ar. This source (an EPI UniBulb™ source) was originally designed for use in the growth of pure nitrides at high growth rates. For growth of As-rich GaNAs, high concentrations of active nitrogen lead to the growth of GaN instead of a random alloy. In this work we demonstrate that a dilute N2/Ar mixture leads to GaNAs films where the amount of nitrogen incorporation varies directly with the percentage of N2 in the gas mixture. Films with high structural quality were grown, thus validating the use of this approach.