Defect control for polarization switching in Bi2WO6-based single crystals

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The authors have investigated the leakage current mechanism and polarization properties of Bi2WO6 single crystals along the a axis at 25°C. High-pressure oxygen annealing led to a decrease in leakage current, showing that electron is a detrimental carrier of the leakage current property. It is demonstrated that 2mol% Mn substitution at the W site is effective for decreasing the leakage current density to the order of 10−8A∕cm2. Mn-doped crystals show a saturated polarization hysteresis loop with a remanent polarization of 50μC∕cm2. Electron spin resonance analysis suggests that Mn3+ acts as an electron acceptor for reducing the leakage current in the Bi2WO6 system.