Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition

Mn-substituted BiFeO3 (BFO) thin films were fabricated by chemical solution deposition on Pt∕Ti∕SiO2∕Si(100) structures. X-ray diffraction analysis revealed that the BFO lattice was somewhat distorted when 5% of Fe atoms were substituted with Mn atoms, but no secondary phase appeared by Mn substitution up to 20%. The leakage current density at higher electric field than 0.6MV∕cm decreased by Mn substitution of 3%–5%, compared with a pure BFO film. Because of the low leakage current density in the high electric field region, well saturated polarization hysteresis loops with remanent polarization of 100μC∕cm2 were observed in the 5% Mn-substituted BFO films at a measurement frequency of 1kHz.