Planar infrared photodiodes have been fabricated on Hg1−xCdxTe (x=0.22) epitaxial layers which were grown on CdTe substrates by the liquid phase epitaxy technique. The n+-p junctions were formed by ion implantation. The R0A products of the diodes have been measured to be ∼105 Ω cm2 at 40 K and ∼107 Ω cm2 at 20 K. These R0A values are believed to be the highest ever reported for HgCdTe photodiodes with comparable cutoff wavelengths. It was found that between 77 and 40 K the diode R0A was limited by generation-recombination current. Effects of field plate bias on diode properties were also analyzed.
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Chu et al. (1980) studied this question.
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