Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15

Concentration and mobility of carriers in Hg1-xZnxTe for x near 0.15 are presented for as grown T.H.M. material and after annealings under mercury pressure. These concentrations and mobilities are near those found in Hg1-xCdxTe for a same band gap (x = 0.22 ). However the mercury diffusion coefficient is lower, this involves difficulty to obtain homogeneous n-type samples through low temperature stoichiometric annealing but reveales a better stability of the material. Indium is a donor dopant but with also a low diffusion coefficient ; moreover this doping strongly decreases the electron mobility. Carrier mobility and intrinsic concentration can be well described with a Kane model for the conduction band. This model leads to an estimation for the heavy hole effective mass of 0.6 m0.