Investigations on the Structure of MOCVD AIN Layers on Silicon

The AIN layers are deposited from NH3 and TMA on (111) and (100) Si according to the MOCVD method. The influence of the substrate temperature and of the composition of the gaseous phase on the real structure is investigated in the temperature range from 1073 to 1573 K. At a temperature of 1573 K and a molar ratio of NH3/TMA > 400/1 producing of monocrystalline AIN layers on (111) Si is successful.