The preparation conditions for the deposition of hydrogenated amorphous silicon-carbon alloys (a-SiC:H) from a glow-discharge plasma have been systematically scanned by changing the starting-gas materials as well as the starting gas to hydrogen dilution ratio. A highly photosensitive alloy showing a photoconductivity to dark conductivity ratio of 107 at a band gap of 2.0 eV was prepared under optimized conditions.
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Matsuda et al. (1986) studied this question.