SOI technology using buried layers of oxidized porous Si

K. Barla; G. Bomchil; R. Hérino; A. Monroy

doi:10.1109/mcd.1987.6323174

November 1, 1987IEEE Circuits and Devices Magazine

SOI technology using buried layers of oxidized porous Si

View at Publisher

Ask AI

Bookmark

Share

Key Points

To develop and evaluate silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) devices fabricated using buried dielectric layers of oxidized porous silicon.
Formed porous silicon selectively within the highly doped intermediate layers of an n/n+/n silicon structure.
Completely oxidized the porous silicon layer to produce an insulating oxide beneath isolated single-crystal silicon islands.
Fabricated CMOS transistors within the isolated silicon islands and characterized junction leakage and carrier mobilities.
Carrier mobilities achieved in the fabricated CMOS devices were qualitatively comparable to those measured in conventional bulk silicon.
Fabricated semiconductor junctions successfully achieved low electrical leakage currents across the isolated active regions.

Abstract

Porous silicon was formed in the highly doped layers of an n/n+/n structure. After full oxidation of porous silicon, CMOS devices were fabricated in insulated single-crystal silicon islands. Mobilities comparable to bulk silicon are measured, and low-leakage junctions are realized.

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Barla et al. (1987) studied this question.

synapsesocial.com/papers/6a97474fa0842223b89bb874 https://doi.org/10.1109/mcd.1987.6323174

View at Publisher

Ask AI

Bookmark

Share

SOI technology using buried layers of oxidized porous Si

Key Points

Abstract

Discussion

Cite This Study

SOI technology using buried layers of oxidized porous Si

Key Points

Abstract

Discussion

Cite This Study

Keep reading

Keep reading