The electrical properties of microwave plasma deposited high dielectric constant (high-k) ZrO 2 films on rf-sputtered polycrystalline ZnO films on n-Si have been studied. Capacitance–voltage ( C – V ), conductance–voltage ( G – V ) and current–voltage ( I – V ) characteristics of metal insulator semiconductor (MIS) structures consisting of high-k ZrO 2 /n-Si have been measured. The fixed oxide charge density ( Q f / q ) and interface state density ( D it ) are found to be 3.3 × 10 11 cm −2 and 1.3 × 10 12 cm −2 eV −1 , respectively. Charge trapping behaviour has also been studied under Fowler–Nordheim (FN) constant current stressing.
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Chatterjee et al. (2002) studied this question.
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