Silicon Oxycarbide Films Produced by Remote Microwave Hydrogen Plasma CVD using a Tetramethyldisiloxane Precursor: Growth Kinetics, Structure, Surface Morphology, and Properties

Amorphous hydrogenated silicon oxycarbide (a‐SiCO:H) thin films are produced by remote microwave hydrogen plasma CVD using 1,1,3,3‐tetramethyldisiloxane precursor. The effect of substrate temperature (TS) on the chemical structure and some properties of resulting a‐SiCO:H films is reported. The examination performed by infrared spectroscopy revealed that the increase in TS involves the elimination of organic moieties from the film and its transformation from polymer‐like to ceramic‐like high‐crosslink‐density material. Due to their small surface roughness, high density, and good optical transparency, the a‐SiCO:H films seem to be useful coatings for optical and electronic devices.