Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas

Using the chemical reaction between silicone oil vapor and ozone gas at atmospheric pressure and above 200 °C, we deposited a Si oxide film. Fourier transformer infrared (FT-IR) spectra of the films were very similar to those of thermal SiO 2 films without peaks due to carbon for deposition temperatures T s from 200 to 350 °C. Although a small peak due to the Si–OH bond appeared for T s ≤300 °C, it was reduced with increasing T s and almost disappeared around 350 °C. Secondary ion mass spectrometry measurements showed that the concentrations of metal and carbon impurities were at a negligible level for device performance even for T s = 200 °C. The dielectric property of the film deposited at 350 °C was also shown to be comparable to the SiO x film produced by a conventional low-temperature deposition method, although the estimated density of interface trap was in the order of 10 11 /(cm 2 ·eV).