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November 30, 1998Applied Physics Letters

Incorporation of indium during molecular beam epitaxy of InGaN

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Authors

TBT. BöttcherKarlsruhe Institute of TechnologySES. EinfeldtFerdinand-Braun-InstitutVKV. KirchnerUniversity of Bremen

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Böttcher et al. (1998) studied this question.

synapsesocial.com/papers/6a97487b63c3919b5aeee7behttps://doi.org/10.1063/1.122728
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Also Consider

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