Diffusion of carbon in SiO2 films and its segregation at the Si/SiO2 interface were investigated using carbon-incorporated borophosphosilicateglass (BPSG) films and carbon-implanted SiO2 films. It was found that carbon atoms diffuse in SiO2 film at a temperature as low as 500° C. Carbon atoms segregated at the Si/SiO2 interface and induced positive charge. The positive charge density was proportional to the segregated carbon concentration. Field emission transmission electron microscopy (FE-TEM) and electron energy loss spectra (EELS) observations revealed that carbon atoms exist on the SiO2 side of the interface, and another carbon-rich phase is formed in S i O 2.
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Mizushima et al. (1997) studied this question.
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