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A hydrogen‐induced infrared absorption band located around 1835.4 cm−1 is observed in protonimplanted GaAs single crystal at 4.2 K and identified as a hydrogen localized vibrational mode (LVM). The dependence of absorption intensity, linewidth, and frequency of the hydrogen LVM on temperature is presented for the first time. Both, the linewidth and frequency shift due to temperature variation are much larger than those of the hydrogen‐vibration in GaAs observed by Cleriaud et al. A structure model for hydrogen LVM in proton‐implanted GaAs is suggested.
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Wang et al. (1990) studied this question.
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