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The Hall effect in thin films of reactively sputtered Cu2S was measured at temperatures from 90 to 300 °K. The hole concentration ranged from 1018 to 2×1019 cm−3. The hole mobility ranged from 5.5 to 9 cm2/V s. The predominant scattering mechanisms are ionized impurity scattering at T<100 °K and optical phonon scattering at T≳100 °K.
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Leong et al. (1979) studied this question.
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