The photoelectronic properties of single‐crystal Cu 2 S ‐ CdS heterojunctions have been investigated. The heterojunctions were formed on the A or Bfaces of conducting CdS single crystals by dipping in a cuprous chloride solution at 75°C. No separate heat‐treatment was given. The cells typically had monochromatic quantum efficiencies greater than 10% in the region 0.5–0.9micro;. The photoresponse is due to carrier pair generation in the Cu 2 S , with transfer of electrons across the interface into the CdS . The forward current at and below room temperature is dominated by tunneling of electrons through interface states. A general band diagram of the heterojunction is discussed. Consistent differences in the behavior of A and Bface samples were noted with respect to the growth kinetics of the Cu 2 S , the maximum photovoltage at 300°K, the I–V characteristics, and the junction capacitance. The effect of uniaxial stress on the capacitance of A and Bface samples suggests a piezoelectric mechanism.
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Lindquist et al. (1972) studied this question.