A direct method for polarity determination of the compound semiconductor (111) face is presented. Channeling shows that the (111)B CdTe face (or Te face) corresponds to the best (111) face for further II-VI epitaxy. Epitaxial relationships are also determined for (111)CdTe/(001) GaAs. It is determined that the (111)CdTe layer also ends up on a B face. The bond directions of Ga and As atoms are determined with respect to those of Te and Cd. These informations suggest a mechanism for such an epitaxial growth.
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Chami et al. (1988) studied this question.
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