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An oxide semiconductor of β-Ga 2 O 3 has a natural solar-blind sensitivity due to its large bandgap of 4.8 eV. To evaluate its potential, a flame detector was fabricated using its conductive single crystal substrate applying a simple method without epitaxy and vacuum processes. The structure is a poly(3,4-ethylene dioxythiophene) complex with polystyrene sulfonic acid (PEDOT–PSS) Schottky contact/a semi-insulating layer of β-Ga 2 O 3 /n-type region of β-Ga 2 O 3 /an In ohmic contact. The spectral response of the detector exhibited a large 250-to-300-nm rejection ratio of 1.5 ×10 4 and an external quantum efficiency of 18% at 250 nm. The device successfully detected a flame by distinguishing 1.5 nW/cm 2 solar-blind light from the flame under a strong fluorescent lamp illumination without any visible-cut filters. This result encourages the fabrication of practical β-Ga 2 O 3 -based flame detectors.
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Oshima et al. (2009) studied this question.
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