Improved SrTiO3 thin films using oxygen relaxation technique

The oxygen relaxation technique for thin-film growth is explored. In this technique, films are deposited as nanoscale multilayered structures. After the deposition of each layer, the deposition process is stopped, the sample is cooled down slowly in situ in an oxygen-rich atmosphere to a temperature of 250°C, then it is heated up to the set deposition temperature for growth of the next layer. The results show that by using the oxygen relaxation technique, it is possible to improve the electrical properties and the microstructure of SrTiO3 films keeping the surface smooth and free from pinholes and pores. The oxygen relaxation technique is more efficient for smaller film thickness repetition.